<span>Indium nitride (InN) nanowires were synthesized on Si (100) substrate by chemical vapor deposition (CVD) method via a vapor-liquid-solid growth mechanism. The Si substrate was covered with 15 A Au film deposited via thermal evaporation. High purity Indium foil and ammonia were used as group III and group V sources respectively. The growth </span><span>temperature and pressure were 580 C and 10 Torr respectively. The growth was conducted for 1.5 hr. The SEM image shows two different orientations of the InN nanowires; non polar m-plane with triangular cross section and polar c-plane with hexagonal cross section. The image was taken at the Swagelok Center for Surface Analysis of Materials (SCSAM) at CWRU.</span>

InN nanowires on Si (100) substrate

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