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Show moreField of the invention: The present invention relates to multi-layer assemblies of thin films, such as for example, those formed from polysilicon. The thin films have predetermined stress characteristics. The present invention also relates to forming such thin films with desired stress profiles by controlling film formation conditions. By appropriately depositing variously stressed thin films and forming multi-layer assemblies therefrom, a resulting multi-layer assembly may be produced that exhibits a predetermined stress profile. The predetermined distribution of stresses in the multi-layer assembly may be sufficient, if desired, to induce geometrical effects such as curling or arching of the assembly. A wide array of devices and applications are also disclosed that may utilize, or at least be based upon, the present invention. Background of the invention: Polysilicon is one of the most widely used structural materials for microelectromechanical systems (MEMS) and devices. However, when deposited by low-pressure chemical vapor deposition (LPCVD) techniques, polysilicon films typically display high residual stresses and often stress gradients as well. These stresses, particularly when compressive, may cause released devices to bend and buckle, altering their original shapes and degrading their performances. While tensile stresses may promote planarity in doubly clamped designs, such stresses also increase stiffness and cause deformation of asymmetric features. Zero-stress polysilicon thin film structures would be optimal for many applications. Prior artisans have attempted to produce thin silicon films with reduced stress levels. U.S. Pat. No. 5,753,134 entitled "Method for Producing a Layer With Reduced Mechanical Stresses" to Biebl, is directed to a method for producing a silicon layer having a reduced overall stress value, the layer being composed of two silicon sublayers. The first sublayer and the second sublayer are matched to one another such that the stresses in the two layers substantially compensate each other, and in effect, cancel each other out. However, Biebl requires that one or more auxiliary layers of silicon dioxide be provided between the sublayers. Those auxiliary layers require additional manufacturing or processing operations. Although satisfactory in some respects, a need still exists for an improved multi-layer polysilicon assembly and technique for forming, and particularly for an assembly that does not require the use of intermediate or auxiliary layers. In addition, a disadvantage often associated with polysilicon films deposited by chemical vapor deposition techniques, pertains to the resulting relatively rough surface of the deposited film. Although approaches are known for producing films having relatively smooth finishes, typically, additional processing steps are necessary or critical process control schemes must be implemented.
http://www.google.com/patents?vid=USPAT6479166
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Show moreBackground of the invention: Polysilicon is one of the most widely used structural materials for microelectromechanical systems and devices. However, when deposited by low-pressure chemical vapor deposition (LPCVD) techniques, polysilicon films typically display high residual stresses and often stress gradients as well. These stresses, particularly when compressive, may cause released devices to bend and buckle, altering their original shapes and degrading their performances. While tensile stresses may promote planarity in doubly clamped designs, such stresses also increase stiffness and cause deformation of asymmetric features. Zero-stress polysilicon thin film structures would be optimal for many applications. Prior artisans have attempted to produce thin silicon films with reduced stress levels. U.S. Pat. No. 5,753,134 entitled "Method for Producing a Layer With Reduced Mechanical Stresses" to Biebl, is directed to a method for producing a silicon layer having a reduced overall stress value, the layer being composed of two silicon sublayers. The first sublayer and the second sublayer are matched to one another such that the stresses in the two layers substantially compensate each other, and in effect, cancel each other out. However, Biebl requires that one or more auxiliary layers of silicon dioxide be provided between the sublayers. Those auxiliary layers require additional manufacturing or processing operations. Although satisfactory in some respects, a need still exists for an improved multi-layer polysilicon assembly and technique for forming, and particularly for an assembly that does not require the use of intermediate or auxiliary layers. In addition, a disadvantage often associated with polysilicon films deposited by chemical vapor deposition techniques, pertains to the resulting relatively rough surface of the deposited film. Although approaches are known for producing films having relatively smooth finishes, typically, additional processing steps are necessary or critical process control schemes must be implemented. Accordingly, a need remains for a technique for producing films and multi-layer assemblies of such films having relatively smooth surfaces. Summary of the invention: The present invention achieves the foregoing objectives and provides in a first aspect, a multi-layer thin film assembly comprising a first thin film including polysilicon, and a second thin film also comprising polysilicon. The first thin film has a devitrified microstructure and an internal tensile stress. The second thin film has a predominantly columnar microstructure and an internal compressive stress. The first and second thin films are disposed immediately adjacent to one another to form the multi-layer assembly, thereby avoiding the use of an intermediate layer between the first and second thin films. In addition, the resulting films have exceptionally smooth surfaces.
http://www.google.com/patents?vid=USPAT6465045
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Show moreBackground of the invention: Polysilicon is one of the most widely used structural materials for microelectromechanical systems and devices. However, when deposited by low-pressure chemical vapor deposition (LPCVD) techniques, polysilicon films typically display high residual stresses and often stress gradients as well. These stresses, particularly when compressive, may cause released devices to bend and buckle, altering their original shapes and degrading their performances. While tensile stresses may promote planarity in doubly clamped designs, such stresses also increase stiffness and cause deformation of asymmetric features. Zero-stress polysilicon thin film structures would be optimal for many applications. Prior artisans have attempted to produce thin silicon films with reduced stress levels. U.S. Pat. No. 5,753,134 entitled "Method for Producing a Layer With Reduced Mechanical Stresses" to Biebl, is directed to a method for producing a silicon layer having a reduced overall stress value, the layer being composed of two silicon sublayers. The first sublayer and the second sublayer are matched to one another such that the stresses in the two layers substantially compensate each other, and in effect, cancel each other out. However, Biebl requires that one or more auxiliary layers of silicon dioxide be provided between the sublayers. Those auxiliary layers require additional manufacturing or processing operations. Although satisfactory in some respects, a need still exists for an improved multi-layer polysilicon assembly and technique for forming, and particularly for an assembly that does not require the use of intermediate or auxiliary layers. In addition, a disadvantage often associated with polysilicon films deposited by chemical vapor deposition techniques, pertains to the resulting relatively rough surface of the deposited film. Although approaches are known for producing films having relatively smooth finishes, typically, additional processing steps are necessary or critical process control schemes must be implemented. Accordingly, a need remains for a technique for producing films and multi-layer assemblies of such films having relatively smooth surfaces. Summary of the invention: The present invention achieves the foregoing objectives and provides in a first aspect, a multi-layer thin film assembly comprising a first thin film including polysilicon, and a second thin film also comprising polysilicon. The first thin film has a devitrified microstructure and an internal tensile stress. The second thin film has a predominantly columnar microstructure and an internal compressive stress. The first and second thin films are disposed immediately adjacent to one another to form the multi-layer assembly, thereby avoiding the use of an intermediate layer between the first and second thin films. In addition, the resulting films have exceptionally smooth surfaces.
http://www.google.com/patents?vid=USPAT6268068
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Show moreField of the invention: The present invention relates to multi-layer assemblies of thin films, such as for example, those formed from polysilicon. The thin films have predetermined stress characteristics. The present invention also relates to forming such thin films with desired stress profiles by controlling film formation conditions. By appropriately depositing variously stressed thin films and forming multi-layer assemblies therefrom, a resulting multi-layer assembly may be produced that exhibits a predetermined stress profile. The predetermined distribution of stresses in the multi-layer assembly may be sufficient, if desired, to induce geometrical effects such as curling or arcing of the assembly. A wide array of devices and applications are also disclosed that may utilize, or at least be based upon, the present invention. Background of the invention: Polysilicon is one of the most widely used structural materials for microelectromechanical systems (MEMS) and devices. However, when deposited by low-pressure chemical vapor deposition (LPCVD) techniques, polysilicon films typically display high residual stresses and often stress gradients as well. These stresses, particularly when compressive, may cause released devices to bend and buckle, altering their original shapes and degrading their performances. While tensile stresses may promote planarity in doubly clamped designs, such stresses also increase stiffness and cause deformation of asymmetric features. Zero-stress polysilicon thin film structures would be optimal for many applications. Prior artisans have attempted to produce thin silicon films with reduced stress levels. U.S. Pat. No. 5,753,134 entitled "Method for Producing a Layer With Reduced Mechanical Stresses" to Biebl, is directed to a method for producing a silicon layer having a reduced overall stress value, the layer being composed of two silicon sublayers. The first sublayer and the second sublayer are matched to one another such that the stresses in the two layers substantially compensate each other, and in effect, cancel each other out. However, Biebl requires that one or more auxiliary layers of silicon dioxide be provided between the sublayers. Those auxiliary layers require additional manufacturing or processing operations. Although satisfactory in some respects, a need still exists for an improved multi-layer polysilicon assembly and technique for forming, and particularly for an assembly that does not require the use of intermediate or auxiliary layers. In addition, a disadvantage often associated with polysilicon films deposited by chemical vapor deposition techniques, pertains to the resulting relatively rough surface of the deposited film. Although approaches are known for producing films having relatively smooth finishes, typically, additional processing steps are necessary or critical process control schemes must be implemented
http://www.google.com/patents?vid=USPAT6610361
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