<span>"View inside a semiconductor growth vacuum chamber. The magenta glow is the result of ionized molecular hydrogen plasma that enters from the quartz tube positioned vertically at the top. When the positively charged hydrogen ions recombine with the excited electrons, light waves of this hue are emitted. The central barbell shaped crucible is filled with molten indium (In). When nitrogen gas is added to the plasma, atomic N dissolves into the liquid metal and the target material indium nitride (InN) can grow. The purpose of the design is to generate a large temperature difference from the top of the crucible to the bottom. The narrow crucible stem has a low thermal conductivity so that heat energy accumulates at the top. The two copper leads at the top of the crucible provide current to a heater. The two pincer-like </span><span>probes measure the temperature at the top and bottom of the indium well. The copper base plate efficiently removes heat from the base of the crucible to a water-cooled vacuum jacket heat sink. This design generates a temperature difference of 150 degC over a span of two centimeters. The temperature at the top is too hot for InN to grow. At the cooler bottom however the growth temperature is optimum. Therefore, away from the chaotic and dynamic surface, as the dissolved N reaches the bottom, the measured growth of InN should happen from the bottom-up producing high quality material. Recommended size height=16"" and width=12""."</span>

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